IRF3910
IRF 3910
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 79 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Total Gate Charge (Qg): 44(max) nC
- Rise Time (tr): 27 nS
- Package: TO252