IRF630
IRF 630
9A, 200V, 0.400 Ohm, N-Channel Power
MOSFETs
Добре дошли, Вход
N-FET 200V 9A 75W 0.4E TO220
Features
• 9A, 200V
• rDS(ON) = 0.400W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”