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2SC 5388SI-N 1500V/700V 5A 50W B>100 High speed (Adoption of MBIT process). High breakdown voltage (V CBO =1500V). High reliability (Adoption of HVP process). On-chip damper diode. =BU808DFX = BU808DFIразпродаден!
2SC 5696 NPN+Di, 1600V/800V, 12A, 85WHigh speed. High breakdown voltage (VCBO=1600V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
2SC 5707 Sanyo Japan Si-N, L,lo-sat, 80V, 8A, 15W, 30/445ns
2SC 5707 (smd) SI-N 80V 8A 15W 30/445nS SMD
2SD 1803: Si NPN Power HF BJT (5A, 60V, 20W, TO-252) NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
2SD 1880 SI-N+D 1500V 8A 70W SOT93 Color Tv Horizontal Deflection Output Applications
2SD 1887 Si-N 1500/800V 10A 70W NPN Transistor TO-247 Color Tv Horizontal Deflection Output Applications
2SD 734 /SANYO Si-N Uni, lo-sat, 25V, 0,7A, 0,6W, 250 M
2SJ 307 P-FET 250V 6A 2W <1E ISO220 Very High-speed Switching Applications
2SK 2043 V-MOS, 600V, 2A, 25W, <4.3om (1A), TO-220 N-Channel Silicon MOSFET, Ultrahigh-Speed Switching Applications
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