SCT2H12NZ

SCT2H12NZGC11

• Manufacturer: ROHM Semiconductor
• Product Category: MOSFET
• RoHS: Details
• Technology: SiC
• Mounting Style: Through Hole
• Package/Case: TO-3PFM-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 1.7 kV
• Id - Continuous Drain Current: 3.7 A
• Rds On - Drain-Source Resistance: 1.15 Ohms
• Vgs - Gate-Source Voltage: - 6 V, + 22 V
• Vgs th - Gate-Source Threshold Voltage: 1.6 V
• Qg - Gate Charge: 14 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 35 W
• Channel Mode: Enhancement
• Configuration: Single
• Product: Power MOSFETs
• Series: SCT2x
• Transistor Type: 1 N-Channel
• Type: N-Channel SiC Power MOSFET
• Brand: ROHM Semiconductor
• Forward Transconductance - Min: 0.4 s
• Fall Time: 74 ns
• Product Type: MOSFET
• Rise Time: 21 ns
• Subcategory: MOSFETs
• Typical Turn-Off Delay Time: 35 ns
• Typical Turn-On Delay Time: 16 ns
• Part # Aliases: SCT2H12NZ
• Unit Weight: 11,405 g