PHT8N06LT
Арт.№: 58069
1 от 1
Безплатна доставка над
150.00
лв.
/
76.69
€
ППЦ:
лв.
лв.
0.90
лв.
/
0.46
€
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Характеристики PHT8N06LT Power MOSFET, N Channel, 55 V, 7.5 A, 0.08 ohm, SOT-223, Surface Mount
The PHT8N06LT is a 55V logic level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and electrostatically robust due to integrated protection diodes. Suitable for use in DC to DC converters and general purpose switching applications.
Информация
PHT8N06LT
150°C Junction temperature
Applications: Power Management, Consumer Electronics, Industrial
- Transistor Polarity: N Channel
- Drain Source Voltage Vds: 55V
- Continuous Drain Current Id: 7.5A
- On Resistance Rds(on): 0.08ohm
- Transistor Case Style: SOT-223
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage Vgs: 5V
- Threshold Voltage Vgs: 1.5V
- Power Dissipation Pd: 8.3W
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
