IRF2807
Арт.№: 30094
1 от 2
Безплатна доставка над
150.00
лв.
/
76.69
€
ППЦ:
лв.
лв.
4.10
лв.
/
2.10
€
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Характеристики IRF 2807 PBF
- Тип транзистор: N-MOSFET
- Поляризация: полеви
- Тип транзистор: HEXFET
- Напрежение дрейн - сорс: 75V
- Ток на дрейна: 82A
- Мощност: 200W
- Корпус: TO220AB
- Напрежение гейт-сорс: 20V
- Съпротивление във включено състояние: 13mΩ
- Термично съпротивление преход-корпус: 750mK/W
- Монтаж: THT
- Заряд на гейта: 106.7nС
Информация
IRF2807PBF INTERNATIONAL RECTIFIER Power MOSFET, 75V, 82A
- HEXFET® Power MOSFET
- VDSS = 75V
- RDS(on) = 13mΩ
- ID = 82A
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
