FQPF6N60
Арт.№: 22093
1 от 9
Безплатна доставка над
с куриер Спиди
150.00
лв.
/
76.69
€
ППЦ:
лв.
лв.
2.96
лв.
/
1.51
€
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Характеристики FQPF6N60
Features
• 3.6A, 600V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Информация
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
