BFG135

BFG135 

• Transistor Type: Bipolar
• Technology: Si
• Transistor Polarity: NPN
• Operating Frequency: 7000 MHz
• Collector- Emitter Voltage VCEO Max: 15 V
• Emitter- Base Voltage VEBO: 2 V
• Continuous Collector Current: 0.15 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Configuration: Single
• Mounting Style: SMD/SMT
• Package/Case: SOT-223
• Packaging: Reel
• Collector- Base Voltage VCBO: 25 V
• DC Current Gain hFE Max: 80
• Height: 1.7 mm
• Length: 6.7 mm
• Type: RF Bipolar Small Signal
• Width: 3.7 mm
• Brand: NXP Semiconductors
• Gain Bandwidth Product fT: 7000 MHz
• Maximum DC Collector Current: 0.15 A
• Pd - Power Dissipation: 1000 mW