2SC1972
Арт.№: 20048
1 от 1
Безплатна доставка над
с куриер Спиди
76.69
€
/
149.99
лв.
ППЦ:
€
€
14.1883
€
/
27.7499
лв.
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Характеристики 2SC 1972SI NPN 35V 3.5A 25W TO220 175MHzDESCRIPTION
2SC1972 is a silicon NPN epitaxial planar type transistor designed
for RF power amplifiers on VHF band mobile radio applications.
2SC1972 is a silicon NPN epitaxial planar type transistor designed
for RF power amplifiers on VHF band mobile radio applications.
Информация
FEATURES
• High power gain: Gpe~7.5dB
@Vee = 13.5V, Po = 14W, f = 175MHz
• Emitter ballasted construction, gold metallization for high
reliability and good performances.
• TO-220 packagesimilar is combinient for mounting.
• Ability of withstanding more than 20:1 load VSWR when
operated at Vee = 15.2V, Po = 18W, f = 175MHz.
APPLICATION
10 to 14 watts output power amplifiers in VHF band mobile
radio applications.
• High power gain: Gpe~7.5dB
@Vee = 13.5V, Po = 14W, f = 175MHz
• Emitter ballasted construction, gold metallization for high
reliability and good performances.
• TO-220 packagesimilar is combinient for mounting.
• Ability of withstanding more than 20:1 load VSWR when
operated at Vee = 15.2V, Po = 18W, f = 175MHz.
APPLICATION
10 to 14 watts output power amplifiers in VHF band mobile
radio applications.
