TMP9N50
Ref: 58747
Description:
TMP 9N50
- FET type: MOSFET
- Transistor Polarity: N
- Total device dissipation (Pd): 44 W
- Drain-source voltage | Vds |: 500 V
- Gate-source voltage | Vgs |: 30 V
- Continuous drain current | Id |: 9 A
- Maximum operating temperature (Tj): 150 ° C
- Rise time (tr): 65 nS
- Drainage-substrate conductance (Cd): 130 pF
- RDS drain-source resistance (on): 0.7 Ohm
- Case: TO-220
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