FQPF7N80C
FQPF 7N80C -Power MOSFET, N-Channel, QFET®, 800V, 7A, 1.9Ω, TO-220F, THT
- Transistor Polarity: N-Channel
- Vds - Drain-Source Breakdown Voltage: 800V
- Id - Continuous Drain Current: 6.6A
- Rds On - Drain-Source Resistance: 1.9Ω
- Vgs - Gate-Source Voltage: - 30V, + 30V
- Vgs th - Gate-Source Threshold Voltage: 3V
- Qg - Gate Charge: 35nC
- Pd - Power Dissipation: 56W
- Channel Mode: Enhancement
