Full description

PRODUCT SUMMARY
Part Number Vos RoS(on) Io
SSP6N60 600V 1.80 6A
SSP6N55 550V 1.80 6A

N-CHANNEL POWER MOSFETS - Samsung semiconductor

FEATURES
• Lower RoS(ON)
• Improved inductive ruggedness
- Fast switching times
• Rugged polysilicon gate cell structure
• Lower input capacitance
• Extended safe operating area
• Improved high temperature reliability