2N2906A

Ref: 4124

Description:

2N 2906 A - Si-P=2N 2904: Uni, 60V, 0,6A, 0,4W, >200 TO-18-3

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2N2906A Bipolar Transistors - BJT PNP Gen Pur SS

Mounting Style: Through Hole
Package/Case: TO-18-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 2.6 V
Maximum DC Collector Current: 600 mA
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 200 C°
DC Collector/Base Gain hFE Min: 40 at 150 mA, 10 V
Minimum Operating Temperature: - 65 C°
Pd - Power Dissipation: 400 mW

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2N 2906 A

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