2N2906A
Ref: 4124
Description:
2N 2906 A - Si-P=2N 2904: Uni, 60V, 0,6A, 0,4W, >200 TO-18-3
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2N2906A Bipolar Transistors - BJT PNP Gen Pur SS
- Mounting Style: Through Hole
- Package/Case: TO-18-3
- Transistor Polarity: PNP
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 60 V
- Collector- Base Voltage VCBO: 60 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 2.6 V
- Maximum DC Collector Current: 600 mA
- Gain Bandwidth Product fT: 200 MHz
- Maximum Operating Temperature: + 200 C°
- DC Collector/Base Gain hFE Min: 40 at 150 mA, 10 V
- Minimum Operating Temperature: - 65 C°
- Pd - Power Dissipation: 400 mW
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