BD244

Si-PNF-L, 115V, 6A, 65W, >3 MHz

Collector-emitter voltage (RBE = 100 Ω)
VCER

BD244 -55V
BD244A -70V
BD244B -90V
BD244C -115V

PNP SILICON POWER TRANSISTORS

Описание

• TRANSISTOR, PNP, TO-220
• Transistor Polarity:PNP
• Collector-to-Emitter Breakdown Voltage:100V
• Power Dissipation Pd:65W
• DC Collector Current:6A
• DC Current Gain hFE:30
• Transistor Case Style:TO-220
• No. of Pins:3
• Application Code:GP
• Case Style:TO-220
• Current Ic hFE:0.3A
• Device Marking:BD244C
• Full Power Rating Temperature:25°C
• Max Current Ic:6A
• Max Current Ic Continuous a:6A
• Max Power Dissipation Ptot:65W
• Max Voltage Vce Sat:-1.5V
• Min Gain Bandwidth ft:3MHz
• Min Hfe:30
• No. of Transistors:1
• Power Dissipation:65W
• Termination Type:Through Hole
• Transistor Type:Bipolar
• Voltage Vcbo:100V