Добре дошли, Вход
M 54532 P
DESCRIPTION
M54532P and M54532FP are four-circuit Darlington transistor
arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
LIN-IC =ULN 2064 B/4xNPN-Darlington-Array
FEATURES
Á High breakdown voltage (BVCEO ³ 50V)
Á High-current driving (Ic(max) = 1.5A)
Á With clamping diodes
Á Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements
(LEDs and lamps), and power amplification
FUNCTION
The M54532P and M54532FP each have four circuits consisting
of NPN Darlington transistors. They have resistance
of 340W between input transistor bases and input pins. A
clamping diode is provided between each output pin (collector)
and COM pin. The output transistor emitters are all connected
to the GND pin.
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.
