STP 3NB60 FP MOSFET N - CHANNEL
STP 3NB60 FP
TYPICAL RDS(on) = 3.3 W
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERYLOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED
Добре дошли, Вход
STP 3NB60 FP
TYPICAL RDS(on) = 3.3 W
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERYLOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,2.2A I(D),TO020AB(FP)
TYPICAL RDS(on) = 3.3 W
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERYLOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED