полеви транзистори - 10 product(s)
MOSFET and JFET, field-effect transistor
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BUZ80
BUZ 80: V-MOS,800V,6.1A,100W BUZ80 N-Channel Mosfet Transistor
2,59 лв - In Stock -
BUZ84AF
BUZ 84 AF MOS-N-FET-eV-MOS, L,800V, »5,6A, 125W, is
3,52 лв - In Stock -
BUZ90A
BUZ 90 A
2,59 лв - In Stock -
BUZ90AFI
BUZ 90 AFI
3,15 лв - In Stock -
BUZ91A
BUZ 91A SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) N-FET 600V 8A 150W 0.9R TO220
1,78 лв - In Stock -
BUZ91A/CHINA
BUZ 91 A CHINA SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) N-FET 600V 8A 150W 0.9R TO220
1,48 лв - In Stock -
CJP10N60 600V N-Channel Power MOSFET
CJP 10N60 MOS-N-FET Vdss=600V Id=10A Rds(on)=8mRPackage: TO-220AB Circuit: Discrete Polarity: N VBRDSS (V): 55 RDS(on) 10V (mOhms) 8.0 ID @ TC = 25C (A) 98 ID @ TC = 100C (A) 69 Qg Typ 97.3 Qgd Typ 36.0 Rth(JC) 1.00 Power Dissipation @ TC = 25C (W) 150Разпродаден!
1,80 лв - -
CS730
CS 730 Транзистор: N-MOSFET; полевиType of control channel: N -Channel Max power dissipation (Pd), W: 75 Max drain-source voltage |Uds|, V: 400 Max gate-source voltage |Ugs|, V: 30 Max drain current |Id|, A: 6 Rise Time of CS730_A8H transistor (tr), nS: 67 Drain-source Capacitance (Cd), pF: 72 Max drain-source on-state resistance (Rds), Ohm: 1 Package: TO220AB
1,80 лв - In Stock -
CS740
CS 740; Транзистор: N-MOSFET; полеви Vertical Double-diffused MOSFET Transistor
2,40 лв - In Stock -
DIT120N08
DIT 120N08 - Транзистор: N-MOSFET; полеви; 80V; 84A; Idm: 450A; 220W; TO220ABПроизводител: DIOTEC SEMICONDUCTOR Тип транзистор: N-MOSFET Поляризация: полеви / униполарен Напрежение дрейн - сорс: 80V Ток на дрейна: 84A Ток на дрейна при импулс: 450A Разсейвана мощност: 220W Корпус: TO220AB Напрежение гейт-сорс: ±20V Монтаж: THT
4,20 лв - In Stock
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